Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Resistor Base R1
- 4.7 kOhms
- Parça Durumu
- Obsolete
- Resistor Emitter Base R2
- 4.7 kOhms
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 250mV
- Transistor Type
- PNP - Pre-Biased
- Yayın Yılı
- 2003
- Tedarikçi Cihaz Paketi
- NS-B1
- Kurşunsuz
- Contains Lead
- RoHS Durumu
- Non-RoHS Compliant
- Voltage Rated Dc
- -50V
- Frequency Transition
- 80MHz
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 5mA 10V
- Currentcollector Ic Max
- 100mA
- Collectoremitter Breakdown Voltage
- 50V
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 300mW
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Kılıf / Paket
- 3-SSIP
- Power Max
- 300mW
- Akım Değeri
- -100mA
- Ambalaj
- Tape & Reel (TR)
- Voltage Collector Emitter Breakdown Max
- 50V
- Current Collector Cutoff Max
- 500nA
- Max Breakdown Voltage
- 50V
- Montaj
- Through Hole
- Max Collector Current
- 100mA
İlgili Ürünler
Stokta
Panjit
2SC164S_R2_00001
Pre-Biased BJT Transistors
Stokta
Aptina
2SC3402-AC
Pre-Biased BJT Transistors
Stokta
Renesas Electronics America Inc
2SD1697-AZ
Pre-Biased BJT Transistors
Stokta
IMP
4245.08.00
Pre-Biased BJT Transistors
Stokta
IMP
4245.08.01
Pre-Biased BJT Transistors
Stokta
Nexperia
934055050115
Pre-Biased BJT Transistors
Stokta
WEIDMÜLLER
9500640000 PCF 7.50/04/180 3.5SN OR BX
Pre-Biased BJT Transistors
Stokta
Diodes Incorporated
ADA123JUQ-7
Pre-Biased BJT Transistors