MTMC8E2A0LBF

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

1.3V @ 1mA

Turn Off Delay Time

4 μs

Fet Type

2 N-Channel (Dual)

Drain Currentmax Abs Id

7A

Number Of Elements

2

Pin Sayısı

8

Max Power Dissipation

1W

Input Capacitance Ciss Max Vds

1450pF @ 10V

Kılıf / Paket

8-SMD, Flat Lead

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

330 ns

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Rds On Max Id Vgs

21m Ω @ 2A, 4.5V

Yükseklik

830μm

Gate To Source Voltage Vgs

12V

Drainsource On Resistancemax

0.033Ohm

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Feature

Standard

Transistor Element Material

SILICON

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Reach Svhc

No SVHC

REACH Uyumluluk Kodu

unknown

ECCN Kodu

EAR99

RoHS Durumu

RoHS Compliant

Drain To Source Breakdown Voltage

40V

Power Dissipation

1W

Fabrika Tedarik Süresi

10 Weeks

Fall Time Typ

33 ns

Rise Time

9ns

Drain To Source Voltage Vdss

20V

Nominal Vgs

850 mV

Genişlik

2.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)