MTM763250LBF

Teknik Özellikler

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate

Current Continuous Drain Id25

1.7A 1A

REACH Uyumluluk Kodu

unknown

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Element Configuration

Dual

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Channels

2

Gate To Source Voltage Vgs

10V

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

1A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

12 Weeks

RoHS Durumu

RoHS Compliant

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

20V

Pin Sayısı

6

Fet Type

N and P-Channel

Number Of Elements

2

Drain Currentmax Abs Id

1.7A

Vgsth Max Id

1.3V @ 1mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Rds On Max Id Vgs

120m Ω @ 1A, 4V

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

6-SMD, Flat Leads

Max Power Dissipation

700mW

Input Capacitance Ciss Max Vds

280pF @ 10V