MTM763200LBF

Teknik Özellikler

ECCN Kodu

EAR99

RoHS Durumu

RoHS Compliant

Power Dissipation

700mW

Fabrika Tedarik Süresi

10 Weeks

Drain To Source Voltage Vdss

20V

Nominal Vgs

850 mV

Genişlik

1.7mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

2mm

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

1.2A

Temel Parça No

MTM76320

Yükseklik

600μm

Gate To Source Voltage Vgs

10V

Parça Durumu

Active

Drainsource On Resistancemax

0.105Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Element Configuration

Dual

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e6

Transistor Element Material

SILICON

Fet Feature

Standard

Current Continuous Drain Id25

1.9A 1.2A

Reach Svhc

No SVHC

REACH Uyumluluk Kodu

unknown

Max Power Dissipation

700mW

Input Capacitance Ciss Max Vds

280pF @ 10V

Kılıf / Paket

6-SMD, Flat Leads

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Rds On Max Id Vgs

105m Ω @ 1A, 4V

Terminal Kaplaması

TIN BISMUTH

Vgsth Max Id

1.3V @ 1mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

N and P-Channel