FC6546010R

Teknik Özellikler

Number Of Elements

2

RoHS Durumu

RoHS Compliant

Element Configuration

Dual

Kılıf / Paket

6-SMD, Flat Leads

Input Capacitance Ciss Max Vds

12pF @ 3V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Terminal Sayısı

6

Rds On Max Id Vgs

12 Ω @ 10mA, 4V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

100 ns

Drain To Source Breakdown Voltage

60V

Yayın Yılı

2011

Parça Durumu

Active

Çalışma Sıcaklığı

150°C TJ

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Turn On Delay Time

100 ns

Drainsource On Resistancemax

15Ohm

ECCN Kodu

EAR99

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

12V

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Vgsth Max Id

1.5V @ 1μA

Drain To Source Voltage Vdss

60V

Yükseklik

600μm

Nominal Vgs

1.2 V

Montaj

Surface Mount

Fabrika Tedarik Süresi

10 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Uzunluk

2mm

Pin Sayısı

6

HTS Kodu

8541.21.00.95

Continuous Drain Current Id

100mA

Max Power Dissipation

150mW