DMG563H40R

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Resistor Emitter Base R2

10k Ω, 5.1k Ω

Pin Sayısı

5

Ambalaj

Tape & Reel (TR)

Current Collector Cutoff Max

500nA

RoHS Durumu

RoHS Compliant

Collector Emitter Voltage Vceo

250mV

Max Power Dissipation

150mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

5

Max Collector Current

100mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Parça Durumu

Discontinued

Vce Saturation Max Ib Ic

250mV @ 500μA, 10mA

Continuous Collector Current

-100mA

Collectoremitter Breakdown Voltage

50V

ECCN Kodu

EAR99

Temel Parça No

DMG563

Polarity

NPN, PNP

Yayın Yılı

2010

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Breakdown Voltage

50V

Fabrika Tedarik Süresi

10 Weeks

Montaj

Surface Mount

Transistor Element Material

SILICON

Additional Feature

BUILT IN BIAS RESISITANCE RATIO 1

Kılıf / Paket

5-SMD, Flat Leads

Montaj Tipi

Surface Mount

Resistor Base R1

10k Ω, 510 Ω

Maks. Çalışma Sıcaklığı

150°C

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V / 20 @ 5mA 10V

Transistor Application

SWITCHING

Element Configuration

Dual

REACH Uyumluluk Kodu

unknown