Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 100mA 1V
- Voltage Rated Dc
- -25V
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- -40V
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 25V
- Montaj Tipi
- Through Hole
- Reach Svhc
- No SVHC
- Frekans
- 200MHz
- Akım Değeri
- -1.5A
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation Max Ib Ic
- 500mV @ 80mA, 800mA
- Max Power Dissipation
- 1W
- Ambalaj
- Tape & Box (TB)
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- 150°C TJ
- Number Of Elements
- 1
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Collectoremitter Saturation Voltage
- -280mV
- Montaj
- Through Hole
- Current Collector Cutoff Max
- 100nA
- Max Breakdown Voltage
- 25V
- Max Collector Current
- 1.5A
- Polaritychannel Type
- PNP
- Transistor Element Material
- SILICON
- Transition Frequency
- 200MHz
- Terminal Pozisyonu
- BOTTOM
- Parça Durumu
- Active
- Collector Emitter Voltage Vceo
- 25V
- Weight
- 240mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 3
- Transistor Application
- AMPLIFIER
- Radyasyon Dayanımı
- No
- Transistor Type
- PNP
- Emitter Base Voltage Vebo
- -6V
- Fabrika Tedarik Süresi
- 6 Weeks
- Hfemin
- 85
- Gain Bandwidth Product
- 200MHz
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