SBRV660VCTT4G

Teknik Özellikler

Voltage Dc Reverse Vr Max

60V

Terminal Pozisyonu

SINGLE

Breakdown Voltagemin

60V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Nonrep Pk Forward Currentmax

75A

Reverse Currentmax

100μA

Number Of Phases

1

Current Average Rectified Io

3A

Voltage Forward Vf Max If

700mV @ 3A

Applications

FAST RECOVERY POWER

JESD-609 Kodu

e3

Rep Pk Reverse Voltagemax

60V

Number Of Elements

2

Reference Standard

AEC-Q101

Diode Type

Schottky

Terminal Kaplaması

Tin (Sn)

Diode Element Material

SILICON

Seri

SWITCHMODE™

Montaj Tipi

Surface Mount

Current Reverse Leakage Vr

100μA @ 60V

Temel Parça No

MBRD660CT

REACH Uyumluluk Kodu

not_compliant

Diode Configuration

1 Pair Common Cathode

Jesd30 Code

R-PSSO-G2

Terminal Sayısı

2

Parça Durumu

Active

Reverse Test Voltage

60V

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Output Currentmax

3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Operating Temperature Junction

-65°C~175°C

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

175°C

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

8 Weeks

Kurşunsuz Kodu

yes

Yayın Yılı

2010