SBE813-TL-E

Teknik Özellikler

Pin Sayısı

8

Average Rectified Current

3A

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Peak Nonrepetitive Surge Current

20A

JESD-609 Kodu

e6

Output Currentmax

3A

Element Configuration

Dual

Min. Çalışma Sıcaklığı

-55°C

Max Reverse Voltage Dc

30V

Diode Element Material

SILICON

Current Reverse Leakage Vr

42μA @ 15V

Number Of Phases

1

Applications

GENERAL PURPOSE

Operating Temperature Junction

-55°C~125°C

Diode Configuration

2 Independent

Yükseklik

750μm

Pin Sayısı

8

Maks. Çalışma Sıcaklığı

125°C

Radyasyon Dayanımı

No

Voltage Forward Vf Max If

520mV @ 3A

Max Reverse Leakage Current

42μA

Additional Feature

HIGH RELIABILITY, LOW LEAKAGE CURRENT

Kılıf / Paket

8-SMD, Flat Lead

Number Of Elements

2

Max Repetitive Reverse Voltage Vrrm

30V

Diode Type

Schottky

ECCN Kodu

EAR99

Peak Reverse Current

42μA

Uzunluk

2.9mm

Forward Current

3A

Reverse Test Voltage

15V

Montaj Tipi

Surface Mount

Max Surge Current

20A

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Reverse Recovery Time

20 ns

Max Forward Surge Current Ifsm

20A

Yayın Yılı

2012

Genişlik

2.3mm

Speed

Fast Recovery =< 500ns, > 200mA (Io)