QRE1113GR

Teknik Özellikler

Çıkış Tipi

Phototransistor

Sensing Method

Reflective

Fabrika Tedarik Süresi

4 Weeks

Kılıf / Paket

4-SMD, Gull Wing

Forward Current

50mA

Number Of Channels

1

Radyasyon Dayanımı

No

Body Breadth

2.7 mm

Max Breakdown Voltage

30V

Weight

78mg

Dark Current

1nA

Output Voltage

20V

Collector Emitter Voltage Vceo

30V

Yayın Yılı

2011

Max Power Dissipation

75mW

Contact Plating

Tin

Additional Feature

5V VCE

Algılama Mesafesi

0.197 (5mm)

Yükseklik

1.87mm

Currentcollector Ic Max

20mA

Uzunluk

3.6mm

Sensorstransducers Type

LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE

Max Collector Current

900μA

Forward Voltage

1.2V

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 5 hours ago)

Pin Sayısı

4

Input Current

50mA

Response Time

20μs, 20μs

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Rise Time

20μs

Kurşunsuz

Lead Free

Termination Type

SOLDER

Collectoremitter Breakdown Voltage

30V

Vcesatmax

0.3 V

Montaj

Surface Mount

Fall Time Typ

20 μs

Reverse Voltage Dc

5V

RoHS Durumu

ROHS3 Compliant