Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Polaritychannel Type
- NPN
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 10mA 1V
- Collectorbase Capacitancemax
- 4pF
- Transistor Type
- NPN
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Collector Emitter Breakdown Max
- 15V
- REACH Uyumluluk Kodu
- unknown
- Vce Saturation Max Ib Ic
- 500mV @ 10mA, 100mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Qualification Status
- Not Qualified
- Jesd30 Code
- O-PBCY-W3
- Terminal Pozisyonu
- BOTTOM
- Yüzey Montaj
- NO
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transition Frequency
- 500MHz
- Current Collector Cutoff Max
- 400nA ICBO
- Montaj Tipi
- Through Hole
- Temel Parça No
- PN2369A
- Ambalaj
- Bulk
- Currentcollector Ic Max
- 200mA
- Transistor Element Material
- SILICON
- Power Max
- 350mW
- Number Of Elements
- 1
- Power Dissipationmax Abs
- 0.625W
- Configuration
- SINGLE
- Terminal Formu
- WIRE
- Terminal Sayısı
- 3
- Yayın Yılı
- 2011
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