Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 500mA 2V
- Power Dissipation
- 2W
- Hfemin
- 100
- Weight
- 188mg
- Emitter Base Voltage Vebo
- -5V
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transition Frequency
- 75MHz
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Akım Değeri
- -3A
- Collectoremitter Breakdown Voltage
- 60V
- Montaj
- Surface Mount
- Transistor Type
- PNP
- Contact Plating
- Tin
- Case Connection
- COLLECTOR
- Temel Parça No
- NZT660
- ECCN Kodu
- EAR99
- Pin Sayısı
- 4
- Yayın Yılı
- 2017
- Max Collector Current
- 3A
- Terminal Sayısı
- 4
- Current Collector Cutoff Max
- 100nA ICBO
- Max Breakdown Voltage
- 60V
- Ambalaj
- Tape & Reel (TR)
- Gain Bandwidth Product
- 75MHz
- Collector Base Voltage Vcbo
- -80V
- Genişlik
- 3.7mm
- Collector Emitter Voltage Vceo
- 60V
- Parça Durumu
- Active
- Polaritychannel Type
- PNP
- Collectoremitter Saturation Voltage
- 550mV
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Kılıf / Paket
- TO-261-4, TO-261AA
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 1.7mm
- Voltage Rated Dc
- -60V
- Frekans
- 75MHz
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