NVMFD5C672NLT1G

Teknik Özellikler

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Active

Turn On Delay Time

11 ns

Case Connection

DRAIN

Terminal Formu

FLAT

Power Dissipation

3.1W

Power Max

3.1W Ta 45W Tc

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Fet Feature

Standard

Continuous Drain Current Id

11A

Rds On Max Id Vgs

11.9m Ω @ 10A, 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Number Of Elements

2

Input Capacitance Ciss Max Vds

793pF @ 25V

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Channels

2

Vgsth Max Id

2.2V @ 30μA

Yükseklik

1.1mm

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.0168Ohm

Gate Charge Qg Max Vgs

5.7nC @ 4.5V

Kılıf / Paket

8-PowerTDFN

Current Continuous Drain Id25

12A Ta 49A Tc

Drain To Source Breakdown Voltage

60V

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

146A

REACH Uyumluluk Kodu

not_compliant

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Max Junction Temperature Tj

175°C

Turn Off Delay Time

22 ns

Jesd30 Code

R-PDSO-F6