NVMFD5877NLWFT1G

Teknik Özellikler

Avalanche Energy Rating Eas

40 mJ

Element Configuration

Dual

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2013

ECCN Kodu

EAR99

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 4 days ago)

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

13 Weeks

Contact Plating

Tin

Jesd30 Code

R-PDSO-F6

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

74A

Fet Type

2 N-Channel (Dual)

Current Continuous Drain Id25

6A

Kılıf / Paket

8-PowerTDFN

Vgsth Max Id

3V @ 250μA

Gate Charge Qg Max Vgs

20nC @ 10V

Drainsource On Resistancemax

0.06Ohm

Pin Sayısı

8

Ds Breakdown Voltagemin

60V

Pin Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

6A

Rds On Max Id Vgs

39m Ω @ 7.5A, 10V

Continuous Drain Current Id

17A

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Number Of Elements

2

Input Capacitance Ciss Max Vds

540pF @ 25V

Montaj Tipi

Surface Mount

Power Dissipation

3.2W

Terminal Formu

FLAT

Case Connection

DRAIN

Reference Standard

AEC-Q101

Drain To Source Voltage Vdss

60V

Radyasyon Dayanımı

No

Fet Feature

Logic Level Gate

Yüzey Montaj

YES

Max Power Dissipation

3.2W