NVMFD5877NLT1G

Teknik Özellikler

Drain To Source Breakdown Voltage

60V

Vgsth Max Id

3V @ 250μA

Pin Sayısı

8

Element Configuration

Dual

Avalanche Energy Rating Eas

10.5 mJ

Transistor Application

SWITCHING

Yayın Yılı

2006

Reach Svhc

No SVHC

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 1 day ago)

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

13 Weeks

Turn On Delay Time

8.1 ns

Kurşunsuz

Lead Free

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Genişlik

5.1mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id

17A

Rds On Max Id Vgs

39m Ω @ 7.5A, 10V

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Number Of Elements

2

Terminal Formu

FLAT

Case Connection

DRAIN

Fet Feature

Logic Level Gate

Max Power Dissipation

3.2W

Fet Type

2 N-Channel (Dual)

Pulsed Drain Currentmax Idm

74A

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerTDFN

Current Continuous Drain Id25

6A

Gate Charge Qg Max Vgs

20nC @ 10V

Yükseklik

1.05mm

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Turn Off Delay Time

14.5 ns

Jesd30 Code

R-PDSO-F6

Parça Durumu

Not For New Designs