NVMFD5873NLT1G

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id

10A

Rds On Max Id Vgs

13m Ω @ 15A, 10V

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

1560pF @ 25V

Number Of Elements

2

Gate To Source Voltage Vgs

20V

Terminal Formu

FLAT

Power Dissipation

3.1W

Reference Standard

AEC-Q101

Drain To Source Voltage Vdss

60V

Case Connection

DRAIN

Fet Feature

Logic Level Gate

Radyasyon Dayanımı

No

Max Power Dissipation

3.1W

Yüzey Montaj

YES

Parça Durumu

Not For New Designs

Halogen Free

Halogen Free

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

40 mJ

Element Configuration

Dual

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 2 days ago)

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-F6

Fabrika Tedarik Süresi

13 Weeks

Drain To Source Breakdown Voltage

60V

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

190A

Kılıf / Paket

8-PowerTDFN