NVMFD5853NLT1G

Teknik Özellikler

Drain To Source Breakdown Voltage

40V

Pin Sayısı

8

Drainsource On Resistancemax

0.015Ohm

Vgsth Max Id

2.4V @ 250μA

Element Configuration

Dual

Avalanche Energy Rating Eas

40 mJ

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

13 Weeks

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 2 days ago)

Kurşunsuz

Lead Free

Turn On Delay Time

10 ns

Ambalaj

Tape & Reel (TR)

Genişlik

5.1mm

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id

12A

Rds On Max Id Vgs

10m Ω @ 15A, 10V

Fet Feature

Logic Level Gate

Max Power Dissipation

3W

Terminal Formu

FLAT

Drain To Source Voltage Vdss

40V

Case Connection

DRAIN

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

165A

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

23nC @ 10V

Pin Sayısı

8

Yükseklik

1.05mm

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F6

Turn Off Delay Time

22 ns

Parça Durumu

Not For New Designs

Halogen Free

Halogen Free