NVMFD5852NLWFT1G

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Number Of Elements

2

Input Capacitance Ciss Max Vds

1800pF @ 25V

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

6.9m Ω @ 20A, 10V

Continuous Drain Current Id

44A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

15A

Max Power Dissipation

3.2W

Yüzey Montaj

YES

Radyasyon Dayanımı

No

Fet Feature

Logic Level Gate

Case Connection

DRAIN

Reference Standard

AEC-Q101

Drain To Source Voltage Vdss

40V

Terminal Formu

FLAT

Kurşunsuz

Lead Free

Halogen Free

Halogen Free

Fall Time Typ

5 ns

Turn On Delay Time

12 ns

Parça Durumu

Not For New Designs

Ambalaj

Tape & Reel (TR)

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

6

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Element Configuration

Dual

Fabrika Tedarik Süresi

13 Weeks

Jesd30 Code

R-PDSO-F6

Operating Mode

ENHANCEMENT MODE

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 4 days ago)

Turn Off Delay Time

27 ns

Current Continuous Drain Id25

15A

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON