NVMD6P02R2G

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Continuous Drain Current Id

4.8A

Rds On Max Id Vgs

33m Ω @ 6.2A, 4.5V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

1700pF @ 16V

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

20V

Fet Feature

Logic Level Gate

Operating Temperature Max

150°C

Max Power Dissipation

750mW

Yüzey Montaj

YES

Fabrika Tedarik Süresi

25 Weeks

Parça Durumu

Active

Fet Type

2 P-Channel (Dual)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

1.2V @ 250μA

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

35nC @ 4.5V

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)