NTZD5110NT5G

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Vgsth Max Id

2.5V @ 250μA

Montaj Tipi

Surface Mount

RoHS Durumu

RoHS Compliant

Turn Off Delay Time

63.7 ns

Pin Sayısı

6

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

24.5pF @ 20V

Ambalaj

Tape & Reel (TR)

Element Configuration

Dual

Fet Feature

Logic Level Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

1.6 Ω @ 500mA, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Formu

FLAT

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Power Dissipation

250mW

Rise Time

7.3ns

Continuous Drain Current Id

294mA

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

60V

Kılıf / Paket

SOT-563, SOT-666

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Drain Currentmax Abs Id

0.294A

Yayın Yılı

2007

Drain To Source Breakdown Voltage

60V

Yüzey Montaj

YES

Fall Time Typ

7.3 ns

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

JESD-609 Kodu

e3

Fet Type

2 N-Channel (Dual)

ECCN Kodu

EAR99

Number Of Elements

2