NTZD3155CT1H

Teknik Özellikler

Terminal Sayısı

6

Number Of Channels

2

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Elements

2

Max Power Dissipation

250mW

Yüzey Montaj

YES

Drainsource On Resistancemax

0.55Ohm

Yayın Yılı

2007

ECCN Kodu

EAR99

Fet Type

N and P-Channel

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

2.5nC @ 4.5V

Fabrika Tedarik Süresi

26 Weeks

Terminal Formu

FLAT

Radyasyon Dayanımı

No

Parça Durumu

Obsolete

Drain Currentmax Abs Id

0.54A

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

430mA

Gate To Source Voltage Vgs

6V

Drain To Source Voltage Vdss

20V

Kılıf / Paket

SOT-563, SOT-666

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

550m Ω @ 540mA, 4.5V

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Standard

Weight

8.193012mg

Transistor Element Material

SILICON

Pin Sayısı

6

Current Continuous Drain Id25

540mA 430mA

Input Capacitance Ciss Max Vds

150pF @ 16V

Montaj Tipi

Surface Mount

RoHS Durumu

RoHS Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

1V @ 250μA