NTZD3152PT5G

Teknik Özellikler

Gate Charge Qg Max Vgs

2.5nC @ 4.5V

Power Dissipation

250mW

Rise Time

12ns

Terminal Formu

FLAT

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Drain Currentmax Abs Id

0.43A

Continuous Drain Current Id

430mA

Gate To Source Voltage Vgs

6V

Drain To Source Voltage Vdss

20V

Kılıf / Paket

SOT-563, SOT-666

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.9Ohm

Fall Time Typ

12 ns

Akım Değeri

-430mA

Yayın Yılı

2006

Drain To Source Breakdown Voltage

-20V

Fet Type

2 P-Channel (Dual)

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Number Of Elements

2

Montaj

Surface Mount

Voltage Rated Dc

-20V

Max Power Dissipation

250mW

Additional Feature

ESD PROTECTION, LOW THRESHOLD

Feedback Capmax Crss

20 pF

Terminal Sayısı

6

Pin Sayısı

6

Temel Parça No

NTZD3152P

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

40

Terminal Kaplaması

Tin (Sn)

Qualification Status

Not Qualified

Vgsth Max Id

1V @ 250μA

Input Capacitance Ciss Max Vds

175pF @ 16V

Transistor Element Material

SILICON

Pin Sayısı

6

RoHS Durumu

RoHS Compliant

Turn Off Delay Time

35 ns