NTTD1P02R2G

Teknik Özellikler

Fet Feature

Logic Level Gate

Terminal Kaplaması

Tin (Sn)

Voltage Rated Dc

-20V

Fall Time Typ

30 ns

Kurşunsuz

Lead Free

Qualification Status

Not Qualified

Montaj

Surface Mount

Turn Off Delay Time

30 ns

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

8V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Akım Değeri

-1.45A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2006

Additional Feature

LOGIC LEVEL COMPATIBLE

Rise Time

30ns

Input Capacitance Ciss Max Vds

265pF @ 16V

Rds On Max Id Vgs

160m Ω @ 1.45A, 4.5V

Terminal Sayısı

8

Continuous Drain Current Id

1.45A

RoHS Durumu

RoHS Compliant

Fet Type

2 P-Channel (Dual)

Gate Charge Qg Max Vgs

10nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Sayısı

8

Parça Durumu

Obsolete

Drainsource On Resistancemax

0.16Ohm

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Tepe Reflow Sıcaklığı (°C)

260

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Pin Sayısı

8

Vgsth Max Id

1.4V @ 250μA

Drain To Source Voltage Vdss

20V

Tepe Reflow Süresi (maks. sn)

40