NTTD1P02R2

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

8V

Yayın Yılı

2006

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Akım Değeri

-1.45A

Input Capacitance Ciss Max Vds

265pF @ 16V

Rds On Max Id Vgs

160m Ω @ 1.45A, 4.5V

Terminal Sayısı

8

Rise Time

30ns

Additional Feature

LOGIC LEVEL COMPATIBLE

Fet Feature

Logic Level Gate

Fall Time Typ

30 ns

Voltage Rated Dc

-20V

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Turn Off Delay Time

30 ns

Kurşunsuz

Contains Lead

Montaj

Surface Mount

Qualification Status

Not Qualified

Terminal Formu

GULL WING

JESD-609 Kodu

e0

Vgsth Max Id

1.4V @ 250μA

Pin Sayısı

8

Max Power Dissipation

500mW

Number Of Elements

2

Drain To Source Breakdown Voltage

-20V

Power Dissipation

500mW

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Voltage Vdss

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

1.45A

Fet Type

2 P-Channel (Dual)

RoHS Durumu

Non-RoHS Compliant

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

10nC @ 4.5V