NTQD6866R2G

Teknik Özellikler

Fet Feature

Logic Level Gate

Pin Sayısı

8

Feedback Capmax Crss

175 pF

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

8

Drainsource On Resistancemax

0.032Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Akım Değeri

6.9A

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Voltage Rated Dc

20V

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

4.7A

Yayın Yılı

2006

Drain To Source Breakdown Voltage

20V

Transistor Application

SWITCHING

Rise Time

45ns

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Input Capacitance Ciss Max Vds

1400pF @ 16V

Transistor Element Material

SILICON

Vgsth Max Id

1.2V @ 250μA

Max Power Dissipation

940mW

Parça Durumu

Obsolete

Turn Off Delay Time

40 ns

Number Of Elements

2

Fall Time Typ

90 ns

Rds On Max Id Vgs

32m Ω @ 6.9A, 4.5V

Montaj Tipi

Surface Mount

Power Dissipation

2W

Nem Hassasiyeti (MSL)

3 (168 Hours)

Qualification Status

Not Qualified