NTQD6866R2

Teknik Özellikler

JESD-609 Kodu

e0

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Kurşunsuz

Contains Lead

Voltage Rated Dc

20V

Akım Değeri

6.9A

Rise Time

45ns

Montaj

Surface Mount

Transistor Application

SWITCHING

Continuous Drain Current Id

4.7A

Yayın Yılı

2006

Drain To Source Breakdown Voltage

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Fet Type

2 N-Channel (Dual)

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Fet Feature

Logic Level Gate

Feedback Capmax Crss

175 pF

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drainsource On Resistancemax

0.032Ohm

Terminal Sayısı

8

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

12V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

22nC @ 4.5V

RoHS Durumu

Non-RoHS Compliant

Tepe Reflow Süresi (maks. sn)

30

Number Of Elements

2

Fall Time Typ

90 ns

Vgsth Max Id

1.2V @ 250μA

Max Power Dissipation

940mW

Parça Durumu

Obsolete

Turn Off Delay Time

40 ns

Input Capacitance Ciss Max Vds

1400pF @ 16V

Transistor Element Material

SILICON