NTMFD4902NFT1G

Teknik Özellikler

Current Continuous Drain Id25

10.3A 13.3A

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

9.7nC @ 4.5V

Pin Sayısı

8

Contact Plating

Tin

Max Power Dissipation

1.16W

Rds On Max Id Vgs

6.5m Ω @ 10A, 10V

Ds Breakdown Voltagemin

30V

Terminal Sayısı

8

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

17 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Element Configuration

Dual

Yüzey Montaj

YES

Case Connection

DRAIN SOURCE

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

Vgsth Max Id

2.2V @ 250μA

Drainsource On Resistancemax

0.01Ohm

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

60A

Fet Feature

Logic Level Gate

Terminal Formu

FLAT

Fet Type

2 N-Channel (Dual), Schottky

Number Of Elements

2

Drain Currentmax Abs Id

13.5A

Yayın Yılı

2012

Pin Sayısı

8

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Power Max

1.1W 1.16W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Continuous Drain Current Id

13.3A

Kurşunsuz Kodu

yes