NTMFD4901NFT3G

Teknik Özellikler

Rds On Max Id Vgs

6.5m Ω @ 10A, 10V

Max Power Dissipation

1.2W

Current Continuous Drain Id25

10.3A 17.9A

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

9.7nC @ 4.5V

Pin Sayısı

8

Fabrika Tedarik Süresi

7 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

30V

Terminal Sayısı

8

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN SOURCE

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Terminal Formu

FLAT

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

100A

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.0035Ohm

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Montaj

Surface Mount

Vgsth Max Id

2.2V @ 250μA

Fet Type

2 N-Channel (Dual), Schottky

Avalanche Energy Rating Eas

115 mJ

Drain Currentmax Abs Id

13.5A

Yayın Yılı

2006

Pin Sayısı

8

Number Of Elements

2

Parça Durumu

Active

Continuous Drain Current Id

17.9A

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Power Max

1.1W 1.2W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Kaplaması

Tin (Sn)