NTMD6N02R2

Teknik Özellikler

Drain To Source Breakdown Voltage

20V

Avalanche Energy Rating Eas

360 mJ

Number Of Elements

2

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

20nC @ 4.5V

Rds On Max Id Vgs

35m Ω @ 6A, 4.5V

Transistor Application

SWITCHING

Yüzey Montaj

YES

Element Configuration

Dual

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e0

Gate To Source Voltage Vgs

12V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Turn Off Delay Time

45 ns

Temel Parça No

NTMD6N02

Voltage Rated Dc

20V

Fet Type

2 N-Channel (Dual)

Yayın Yılı

2005

Pin Sayısı

8

Lifecycle Status

OBSOLETE (Last Updated: 1 day ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

3.92A

Parça Durumu

Obsolete

Kurşunsuz Kodu

no

Input Capacitance Ciss Max Vds

1100pF @ 16V

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Kurşunsuz

Contains Lead

Pin Sayısı

8

Max Power Dissipation

730mW

Rise Time

35ns

Terminal Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

240