NTMD4N03R2

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Power Dissipationmax Abs

2W

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-G8

Fabrika Tedarik Süresi

[object Object]

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

240

JESD-609 Kodu

e0

Operating Temperature Max

150°C

Polaritychannel Type

N-CHANNEL

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.06Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

12A

RoHS Durumu

Non-RoHS Compliant

Tepe Reflow Süresi (maks. sn)

30

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

80 mJ

Number Of Terminals

8

Number Of Elements

2

Drain Currentmax Abs Id

4A

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

no

Terminal Kaplaması

Tin/Lead (Sn80Pb20)