NTMD4820NR2G

Teknik Özellikler

Transistor Application

SWITCHING

Yükseklik

1.5mm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

Element Configuration

Dual

Contact Plating

Tin

Gate Charge Qg Max Vgs

7.7nC @ 4.5V

Current Continuous Drain Id25

4.9A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Uzunluk

5mm

Rds On Max Id Vgs

20m Ω @ 7.5A, 10V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

9.4 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

1.28W

Montaj Tipi

Surface Mount

Power Max

750mW

Terminal Sayısı

8

Fabrika Tedarik Süresi

2 Weeks

Pin Sayısı

8

Radyasyon Dayanımı

No

Rise Time

4ns

Max Power Dissipation

1.29W

Vgsth Max Id

3V @ 250μA

Drainsource On Resistancemax

0.02Ohm

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Genişlik

4mm

Fall Time Typ

4 ns

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Yayın Yılı

2007

Drain Currentmax Abs Id

4.9A