NTMD3P03R2G

Teknik Özellikler

Number Of Elements

2

Drain To Source Breakdown Voltage

-30V

Turn On Delay Time

16 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Montaj Tipi

Surface Mount

Power Max

730mW

Yükseklik

1.5mm

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Direnç

85MOhm

Uzunluk

5mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

2.34A

Contact Plating

Tin

Gate Charge Qg Max Vgs

25nC @ 10V

Rds On Max Id Vgs

85m Ω @ 3.05A, 10V

Nominal Vgs

-1.7 V

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

Additional Feature

AVALANCHE RATED

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Pin Sayısı

8

Feedback Capmax Crss

135 pF

Yayın Yılı

2006

Turn Off Delay Time

45 ns

Temel Parça No

NTMD3P03

Voltage Rated Dc

-30V

Fet Type

2 P-Channel (Dual)

Input Capacitance Ciss Max Vds

750pF @ 24V

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

-3.05A

Parça Durumu

Active

Kurşunsuz Kodu

yes