NTMD2C02R2G

Teknik Özellikler

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Number Of Elements

2

Drain To Source Breakdown Voltage

20V

Qualification Status

Not Qualified

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

12V

JESD-609 Kodu

e3

Additional Feature

LOGIC LEVEL COMPATIBLE

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Rds On Max Id Vgs

43m Ω @ 4A, 4.5V

Gate Charge Qg Max Vgs

20nC @ 4.5V

Current Continuous Drain Id25

5.2A 3.4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

1100pF @ 10V

Kurşunsuz Kodu

yes

Parça Durumu

Obsolete

Continuous Drain Current Id

3.4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

OBSOLETE (Last Updated: 1 day ago)

Yayın Yılı

2006

Pin Sayısı

8

Terminal Pozisyonu

DUAL

Fet Type

N and P-Channel

Voltage Rated Dc

20V

Turn Off Delay Time

35 ns

Tepe Reflow Süresi (maks. sn)

40

RoHS Durumu

RoHS Compliant

Akım Değeri

2A

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Vgsth Max Id

1.2V @ 250μA

Montaj

Surface Mount