NTLJD3183CZTBG

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Dual

Terminal Sayısı

6

Transistor Application

SWITCHING

Rise Time

9ns

Max Power Dissipation

710mW

Rds On Max Id Vgs

68m Ω @ 2A, 4.5V

Pin Sayısı

6

Gate Charge Qg Max Vgs

7nC @ 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

2.6A 2.2A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

RoHS Compliant

Terminal Formu

NO LEAD

Fet Feature

Logic Level Gate

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

Montaj

Surface Mount

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

8V

Fall Time Typ

12.5 ns

Ambalaj

Tape & Reel (TR)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

JESD-609 Kodu

e3

Case Connection

DRAIN

Number Of Elements

2

Yayın Yılı

2008

Pin Sayısı

6

Fet Type

N and P-Channel

Turn Off Delay Time

14 ns

Drain To Source Breakdown Voltage

20V

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

355pF @ 10V

Kılıf / Paket

6-WDFN Exposed Pad

Power Dissipation

1.5W