NTLJD3181PZTBG

Teknik Özellikler

Number Of Elements

2

Yayın Yılı

2008

Pin Sayısı

6

Drain Currentmax Abs Id

3.2A

Turn Off Delay Time

14 ns

Drain To Source Breakdown Voltage

20V

Fet Type

2 P-Channel (Dual)

Input Capacitance Ciss Max Vds

450pF @ 10V

Kılıf / Paket

6-WDFN Exposed Pad

Power Dissipation

1.5W

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

2.2A

Parça Durumu

Obsolete

Terminal Sayısı

6

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Dual

Gate Charge Qg Max Vgs

7.8nC @ 4.5V

Pin Sayısı

6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

710mW

Rise Time

9ns

Rds On Max Id Vgs

100m Ω @ 2A, 4.5V

Montaj

Surface Mount

Qualification Status

Not Qualified

Vgsth Max Id

1V @ 250μA

Drain To Source Voltage Vdss

20V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

8V

Drainsource On Resistancemax

0.1Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

RoHS Compliant