NTLJD2105LTBG

Teknik Özellikler

Qualification Status

Not Qualified

Fet Type

N and P-Channel

Yayın Yılı

2007

Kurşunsuz Kodu

yes

RoHS Durumu

RoHS Compliant

Kılıf / Paket

6-WDFN Exposed Pad

Max Power Dissipation

520mW

Number Of Elements

2

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Terminal Formu

C BEND

Tepe Reflow Sıcaklığı (°C)

265

Case Connection

DRAIN

Terminal Sayısı

6

Element Configuration

Dual

Drain To Source Breakdown Voltage

8V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

2.5A

Lifecycle Status

LAST SHIPMENTS (Last Updated: 2 days ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

8V

Vgsth Max Id

1V @ 250μA

Tepe Reflow Süresi (maks. sn)

40

Drainsource On Resistancemax

0.05Ohm

Pin Sayısı

6

Pin Sayısı

6

Terminal Kaplaması

Matte Tin (Sn)

Rds On Max Id Vgs

50m Ω @ 4A, 4.5V

Transistor Element Material

SILICON

Power Dissipation

520mW

Kurşunsuz

Lead Free

Montaj

Surface Mount

Fet Feature

Standard

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ