NTJD2152PT2

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Akım Değeri

-775mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

1V @ 250μA

Gate To Source Voltage Vgs

8V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

775mA

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON

Power Dissipation

270mW

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Obsolete

Fet Feature

Logic Level Gate

Montaj

Surface Mount

Voltage Rated Dc

-8V

Drainsource On Resistancemax

0.3Ohm

Rds On Max Id Vgs

300m Ω @ 570mA, 4.5V

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Pin Sayısı

6

Gate Charge Qg Max Vgs

4nC @ 4.5V

Drain Currentmax Abs Id

0.775A

Number Of Elements

2

REACH Uyumluluk Kodu

not_compliant

Fall Time Typ

23 ns

Max Power Dissipation

270mW

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

RoHS Durumu

Non-RoHS Compliant

Rise Time

23ns

Temel Parça No

NTJD2152P

Terminal Formu

GULL WING

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Fet Type

2 P-Channel (Dual)

Qualification Status

Not Qualified

Feedback Capmax Crss

40 pF

Input Capacitance Ciss Max Vds

225pF @ 8V

Yayın Yılı

2006

Montaj Tipi

Surface Mount

JESD-609 Kodu

e0