NTHD4401PT1G

Teknik Özellikler

Voltage Rated Dc

-20V

Vgsth Max Id

1.2V @ 250μA

RoHS Durumu

RoHS Compliant

Lifecycle Status

LAST SHIPMENTS (Last Updated: 8 hours ago)

Drainsource On Resistancemax

0.155Ohm

Terminal Kaplaması

Tin (Sn)

Rise Time

13ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Max Power Dissipation

1.1W

Gate Charge Qg Max Vgs

6nC @ 4.5V

Temel Parça No

NTHD4401P

Ambalaj

Tape & Reel (TR)

Number Of Elements

2

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

C BEND

Terminal Sayısı

8

Yayın Yılı

2005

Power Dissipation

1.1W

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

40

Akım Değeri

-2.1A

Drain To Source Breakdown Voltage

-20V

Rds On Max Id Vgs

155m Ω @ 2.1A, 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Input Capacitance Ciss Max Vds

300pF @ 10V

Turn Off Delay Time

33 ns

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

12V

Drain To Source Voltage Vdss

20V

Montaj

Surface Mount

Kılıf / Paket

8-SMD, Flat Lead

Pin Sayısı

8