NTHD4401PT1

Teknik Özellikler

Max Power Dissipation

1.1W

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

6nC @ 4.5V

Ambalaj

Tape & Reel (TR)

Temel Parça No

NTHD4401P

Transistor Element Material

SILICON

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Terminal Formu

C BEND

Transistor Application

SWITCHING

Yayın Yılı

2005

Terminal Sayısı

8

Voltage Rated Dc

-20V

Vgsth Max Id

1.2V @ 250μA

RoHS Durumu

Non-RoHS Compliant

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Rise Time

13ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.155Ohm

Fet Feature

Logic Level Gate

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Gate To Source Voltage Vgs

12V

Drain To Source Voltage Vdss

20V

Kılıf / Paket

8-SMD, Flat Lead

Montaj

Surface Mount

Fall Time Typ

13 ns

Pin Sayısı

8

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

240

Feedback Capmax Crss

50 pF

Qualification Status

Not Qualified

Continuous Drain Current Id

2.1A

ECCN Kodu

EAR99

Power Dissipation

1.1W

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

30

Akım Değeri

-2.1A