NTHD2102PT1G

Teknik Özellikler

Kılıf / Paket

8-SMD, Flat Lead

Montaj

Surface Mount

Fall Time Typ

20 ns

Pin Sayısı

8

REACH Uyumluluk Kodu

unknown

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

8V

Kurşunsuz Kodu

yes

Continuous Drain Current Id

4.6A

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

40

Akım Değeri

-3.4A

Power Dissipation

1.1W

Input Capacitance Ciss Max Vds

715pF @ 6.4V

Turn Off Delay Time

20 ns

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

-8V

Rds On Max Id Vgs

58m Ω @ 3.4A, 4.5V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Temel Parça No

NTHD2102P

Max Power Dissipation

1.1W

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

16nC @ 2.5V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

C BEND

Transistor Application

SWITCHING

Terminal Sayısı

8

Yayın Yılı

2004

Number Of Elements

2

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

1.5V @ 250μA

Voltage Rated Dc

-8V

Terminal Kaplaması

Tin (Sn)

Rise Time

20ns