NTHC5513T1

Teknik Özellikler

Rds On Max Id Vgs

80m Ω @ 2.9A, 4.5V

Drain To Source Breakdown Voltage

-20V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

33 ns

Input Capacitance Ciss Max Vds

180pF @ 10V

JESD-609 Kodu

e0

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Dissipation

1.1W

Tepe Reflow Süresi (maks. sn)

30

Fet Type

N and P-Channel

Akım Değeri

3.1A

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

240

Qualification Status

Not Qualified

Drain Currentmax Abs Id

2.1A

ECCN Kodu

EAR99

Continuous Drain Current Id

2.2A

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Gate To Source Voltage Vgs

12V

Kılıf / Paket

8-SMD, Flat Lead

Pin Sayısı

8

Yüzey Montaj

YES

Current Continuous Drain Id25

2.9A 2.2A

RoHS Durumu

Non-RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

13ns

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Fet Feature

Logic Level Gate

Voltage Rated Dc

20V

Vgsth Max Id

1.2V @ 250μA

Transistor Element Material

SILICON

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

C BEND

Pulsed Drain Currentmax Idm

10A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING