NTGD4161PT1G

Teknik Özellikler

RoHS Durumu

RoHS Compliant

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)

Current Continuous Drain Id25

1.5A

Yüzey Montaj

YES

Fet Feature

Logic Level Gate

Terminal Kaplaması

Tin (Sn)

Rise Time

9.2ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

3V @ 250μA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Element Configuration

Dual

Number Of Elements

2

Terminal Sayısı

6

Yayın Yılı

2000

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

10A

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

7.1nC @ 10V

Montaj Tipi

Surface Mount

Max Power Dissipation

600mW

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

160m Ω @ 2.1A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

281pF @ 15V

Turn Off Delay Time

12.5 ns

Power Dissipation

1.1W

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

40

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

6

Continuous Drain Current Id

-2.1A

ECCN Kodu

EAR99

Drain Currentmax Abs Id

1.5A

Kurşunsuz Kodu

yes