NSVMUN5312DW1T2G

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Jesd30 Code

R-PDSO-G6

Montaj

Surface Mount

Current Collector Cutoff Max

500nA

Max Collector Current

100mA

Polaritychannel Type

NPN AND PNP

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 10V

Operating Temperature Min

-55°C

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Power Dissipation

250mW

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Power Max

250mW

Transistor Application

SWITCHING

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Fabrika Tedarik Süresi

8 Weeks

Operating Temperature Max

150°C

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Resistor Base R1

22k Ω

Resistor Emitter Base R2

22k Ω

Parça Durumu

Active

Collector Emitter Voltage Vceo

250mV

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING