NSVMUN5214DW1T3G

Teknik Özellikler

Max Power Dissipation

250mW

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Power Max

250mW

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

JESD-609 Kodu

e3

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

Max Collector Current

100mA

Polaritychannel Type

NPN

Jesd30 Code

R-PDSO-G6

Montaj

Surface Mount

Current Collector Cutoff Max

500nA

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Parça Durumu

Active

Resistor Emitter Base R2

47k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

250mV

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Resistor Base R1

10k Ω

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2012

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Transistor Type

2 NPN - Pre-Biased (Dual)