NSVMUN5213DW1T3G

Teknik Özellikler

Transistor Application

SWITCHING

Transistor Type

2 NPN - Pre-Biased (Dual)

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

8 Weeks

Yayın Yılı

2012

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Resistor Base R1

47k Ω

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Parça Durumu

Active

Resistor Emitter Base R2

47k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

250mV

Terminal Sayısı

6

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Number Of Elements

2

Terminal Kaplaması

Tin (Sn)

Current Collector Cutoff Max

500nA

Jesd30 Code

R-PDSO-G6

Montaj

Surface Mount

Max Collector Current

100mA

Polaritychannel Type

NPN

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

JESD-609 Kodu

e3

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Max Power Dissipation

250mW

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Power Max

250mW