NSVDTC113EM3T5G

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Resistor Base R1

1 k Ω

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Resistor Emitter Base R2

1 k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

250mV

Terminal Formu

FLAT

Tepe Reflow Süresi (maks. sn)

30

Yayın Yılı

2009

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Transistor Type

NPN - Pre-Biased

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Collectoremitter Breakdown Voltage

50V

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN RESISTOR

Max Power Dissipation

260mW

Vce Saturation Max Ib Ic

250mV @ 5mA, 10mA

Kılıf / Paket

SOT-723

Power Max

260mW

Dc Current Gain Hfe Min Ic Vce

3 @ 5mA 10V

Reference Standard

AEC-Q101

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Jesd30 Code

R-PDSO-F3

Montaj

Surface Mount

Current Collector Cutoff Max

500nA

Max Collector Current

100mA

Polaritychannel Type

NPN

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Lifecycle Status

ACTIVE (Last Updated: 2 weeks ago)