NSVDTA123EM3T5G

Teknik Özellikler

Yayın Yılı

2009

Tepe Reflow Süresi (maks. sn)

30

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Transistor Type

PNP - Pre-Biased

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

8 Weeks

Resistor Base R1

2.2 k Ω

Terminal Pozisyonu

DUAL

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Terminal Formu

FLAT

Resistor Emitter Base R2

2.2 k Ω

Parça Durumu

Active

Collector Emitter Voltage Vceo

250mV

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Collector Cutoff Max

500nA

Jesd30 Code

R-PDSO-F3

Montaj

Surface Mount

Max Collector Current

100mA

Polaritychannel Type

PNP

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 2 weeks ago)

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Configuration

SINGLE WITH BUILT-IN RESISTOR

Collectoremitter Breakdown Voltage

50V

Montaj Tipi

Surface Mount

Max Power Dissipation

260mW

Vce Saturation Max Ib Ic

250mV @ 5mA, 10mA

Kılıf / Paket

SOT-723

Power Max

260mW

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

Dc Current Gain Hfe Min Ic Vce

8 @ 5mA 10V

JESD-609 Kodu

e3