NSVDTA114EET1G

Teknik Özellikler

Yayın Yılı

2004

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Transistor Type

PNP - Pre-Biased

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

2 Weeks

Resistor Base R1

10 k Ω

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Collector Emitter Voltage Vceo

250mV

Nem Hassasiyeti (MSL)

1 (Unlimited)

Resistor Emitter Base R2

10 k Ω

Parça Durumu

Active

Current Collector Cutoff Max

500nA

Montaj

Surface Mount

Jesd30 Code

R-PDSO-G3

Polaritychannel Type

PNP

Max Collector Current

100mA

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Power Max

200mW

Kılıf / Paket

SC-75, SOT-416

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Max Power Dissipation

200mW

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V

JESD-609 Kodu

e3