NSVBC143ZDXV6T1G

Teknik Özellikler

Terminal Formu

FLAT

Nem Hassasiyeti (MSL)

1 (Unlimited)

Resistor Emitter Base R2

47k Ω

Parça Durumu

Active

Resistor Base R1

4.7k Ω

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

17 Weeks

Transistor Type

2 NPN - Pre-Biased (Dual)

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Currentcollector Ic Max

100mA

Kurşunsuz Kodu

yes

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Power Max

500mW

Kılıf / Paket

SOT-563, SOT-666

Vce Saturation Max Ib Ic

250mV @ 1mA, 10mA

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Seri

Automotive, AEC-Q101

Montaj Tipi

Surface Mount

Additional Feature

BUILT IN BIAS RESISTOR RATIO 10

Number Of Elements

2

Voltage Collector Emitter Breakdown Max

50V

Terminal Sayısı

6

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Polaritychannel Type

NPN

Current Collector Cutoff Max

500nA

Jesd30 Code

R-PDSO-F6