NSVBC124EPDXV6T1G

Teknik Özellikler

Polaritychannel Type

NPN AND PNP

Jesd30 Code

R-PDSO-F6

Current Collector Cutoff Max

500nA

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Voltage Collector Emitter Breakdown Max

50V

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Sayısı

6

Power Max

339mW

Kılıf / Paket

SOT-563, SOT-666

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Seri

Automotive, AEC-Q101

Currentcollector Ic Max

100mA

JESD-609 Kodu

e3

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 10V

Kurşunsuz Kodu

yes

Operating Temperature Min

-55°C

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2016

Fabrika Tedarik Süresi

17 Weeks

Operating Temperature Max

150°C

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Resistor Emitter Base R2

22k Ω

Terminal Formu

FLAT

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Resistor Base R1

22k Ω